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SHINDENGEN
Schottky Rectifiers (SBD)
Single
D3S6M
60V 3A
FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe 1.4Olead APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliance, Office Equipment *oe Telecommunication
OUTLINE DIMENSIONS
Case : AX14
Unit : mm
RATINGS
*oeAbsolute Maximum Ratings Tl=25*Z Item Symbol Conditions Ratings Unit Tstg -40*150 *Z Storage Temperature Tj 150 *Z Operating Junction Temperature RM Maximum Reverse Voltage V 60 V Repetitive Peak Surge ReverseRRSM V Voltage width0.5ms, duty 1/40 Pulse 65 V IO 3 A Average Rectified Forward Current50Hz sine wave, R-load Tl=133*Z 1.8 50Hz sine wave, R-load Ta=57*Z A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Rating 80 per diode, Tj=125 of Repetitive Peak Surge Reverse Power width10Es, Tj=25*Z PRRSM Pulse 330 W *oeElectrical Characteristics Tl=25*Z Item Symbol Conditions Forward Voltage V IF F =3A, Pulse measurement IR V=V, R RM Pulse measurement Reverse Current R Junction Capacitance Cj f=1MHz, V =10V AEjl junction to lead Thermal Resistance AEja junction to ambient* ithout heatsink*j W i Ratings Unit Max.0.58 V Max.2.5 mA Typ.130 pF Max.6.5*Z/W Max.62
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D3S6M
Forward Voltage
10
Forward Current IF [A]
1 Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D3S6M
Junction Capacitance
f=1MHz Tl=25C TYP per diode
1000
Junction Capacitance Cj [pF]
100
10 0.1 1
10
Reverse Voltage VR [V]
D3S6M
1000
Reverse Current
Tl=150C [MAX] 100 Tl=150C [TYP]
Reverse Current IR [mA]
Tl=125C [TYP] 10 Tl=100C [TYP]
1
Tl=75C [TYP]
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
50
60
Reverse Voltage VR [V]
D3S6M
10
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
8
DC D=0.05 0.1
6
0.2 0.3
4
0.5
2
SIN 0.8
0
0
10
20
30
40
50
60
70
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
D3S6M
3
Forward Power Dissipation
DC D=0.8
Forward Power Dissipation PF [W]
2.5 SIN 2 0.1 1.5 0.05 0.3 0.2
0.5
1
0.5
0
0
1
2
3
4
5
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
D3S6M
3.5
Derating Curve
Average Rectified Forward Current IO [A]
3
l DC D=0.8 l = 24mm PCB
2.5
2
0.5 SIN 0.3 0.2 0.1
1.5
1
0.5
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
D3S6M
6
Derating Curve
Average Rectified Forward Current IO [A]
5
DC D=0.8
4 0.5 3 SIN 0.3 0.2 2 0.1 1 0.05
0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
D3S6M
150
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=125C before surge current is applied 100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP

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